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Major OEMs are optimistic about MRAM development

Contributed by Yingshang Microelectronics 2020/1/10 17:00:39

0 Popularity: 25

  • Keywords: everspin MRAM MRAM market
  • Abstract: MRAM has advantages in non-volatile, write speed, and life span due to its unique storage method. However, whether it can be widely adopted still faces a series of challenges.

MRAM is a new storage medium combining resistance and random access with both non-volatile and random access characteristics. It can serve as both memory and hard disk. The writing speed can reach thousands of times of NAND flash memory. In addition, its manufacturing process requires low quality, high yield, and it can well control costs. In terms of life, due to the special storage method of MRAM, the life durability of the product is also far beyond that of traditional RAM. Challenges to mass adoption
 
MRAM 因其独特的存储方式在非易失性,写入速度,寿命等各方面均有优势,然而能否被广泛采用仍面临一系列挑战。 There is no doubt that MRAM has advantages in non-volatile, write speed, and life span due to its unique storage method. However, whether it can be widely adopted still faces a series of challenges.
 
Generally speaking, MRAM is generally composed of three major parts: a semiconductor substrate, a magnetic spin tunneling junction (MTJ), and a magnetic generator. The industry research report "Emerging Memories Ramp Up" shows that the reason why MRAM faces an important challenge in the process of widespread promotion is that the materials and processes used are different from traditional CMOS manufacturing.
 
Performance life far exceeds NAND, how long is MRAM from large-scale applications? Samsung's yield has been reached 90%
 
The report states that MRAM is currently produced in a separate fab as a "back-end production line" (BEOL) process and requires new equipment not used in traditional CMOS manufacturing processes, such as ion beam etching and new sputtering targets. class. If you want to reduce the cost of embedded MRAM products, their manufacturing needs to enter the CMOS wafer fab as a part of conventional device production.
 
According to Kevin Moraes, vice president of metal deposition products at Applied Materials, in the MTJ structure, storage layers, tunnel barrier layers and reference layers are stacked on top of each other. Some of these stacked materials act as barrier film layers. These barrier layers are very thin and can be easily destroyed, so how to accurately deposit these films is also very important.
 
In addition to Samsung's active promotion of MRAM, Intel also announced in the first half of this year that it is ready for mass production of eMRAM chips. Armor Xia has also issued a number of MRAM related patents to promote technological development. EVERSPIN 供应商仍致力于研发创新出新的产品提供给市场. As an MRAM leader, EVERSPIN suppliers are still committed to researching and developing innovative products to the market.
 
It is reported that Samsung improves the uniformity of the MTJ structure to reduce the deviation of the impedance value and the recording current, improve the process, reduce the density of defects that will adversely affect the MTJ, and improve the capacity and yield.
 
In addition, with the development of storage devices toward high integration, the miniaturization of MRAM is also facing difficulties.
 
At present, new storage represented by MRAM has reached a critical stage, and whether it can become the next-generation storage medium replacing NAND flash memory. In addition to the continuous improvement of materials and processes, it is also critical to build a comprehensive device technology ecosystem. It is believed that under the guidance of market demand and the promotion of major manufacturers, storage products must develop in the direction of higher performance, larger capacity, and better cost.

Review editor (Wang Jing)
For more information, please visit Yingshang Microelectronics ( http://home.rgwds.com/profile/?uid=S019112716274600001 )

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