Based on full-featured 64Mb STT-MRAM
Contributed by Yingshang Microelectronics 1/7/2020 16:24:04
0 Popularity: 2
- Keywords: everspin STT-MRAM
- Abstract: In order to achieve 64Mb performance, Everspin has developed a compact MTJ stack with low switching voltage (Vsw), high breakdown voltage (Vbd) and excellent switching reliability.
Spin-torque magnetoresistive random access memory (ST-MRAM) is expected to become a fast, high-density non-volatile memory that can enhance the performance of various applications, especially when used as data storage. Devices and systems. everspin 开发了基于90nmCMOS技术的全功能64Mb DDR3 STT-MRAM 。 To this end, everspin has developed a full-featured 64Mb DDR3 STT-MRAM based on 90nm CMOS technology . The memory is organized in a configuration of 8 storage areas and can support 1.6Giga Transfers / s (DDR3-1600). Standard memory tests have been run on all 64Mb at 800MHz, such as March6N mode, where 0 failed more than 105 cycles. The full functionality from 0 ° C to 70 ° C was also verified, with no significant change in performance. These bits are a magnetic tunnel junction (MTJ) with MgO tunnel barrier and a magnetic free layer with in-plane magnetization made of CoFeB-based alloy, but the out-of-plane anisotropy is reduced by more than 50% for the following reasons: Vertical surface anisotropy.
In order to achieve 64Mb performance, Everspin has developed a compact MTJ stack with low switching voltage (Vsw), high breakdown voltage (Vbd) and excellent switching reliability. ST switch distribution has σ ≈ 10%, and we find that it is in good agreement with a single Gaussian distribution (low error rate). For our optimized material, Vsw / Vbd ≈ 0.3, and the distance between Vsw and Vbd is about 25σ. The energy barrier (Eb) for magnetization reversal uses both coercive force that varies with time and higher temperatures to accelerate the reversal.
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